Dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures

Citation
U. Tisch et al., Dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures, J APPL PHYS, 89(5), 2001, pp. 2676-2685
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
5
Year of publication
2001
Pages
2676 - 2685
Database
ISI
SICI code
0021-8979(20010301)89:5<2676:DOTRIO>2.0.ZU;2-9
Abstract
The refractive index of hexagonal AlxGa1-xN at room temperature and its tem perature dependence at elevated temperatures have been determined with high accuracy by spectroscopic ellipsometry. Measurements have been conducted o n samples with aluminum molar fractions ranging from 0% to 65% and at tempe ratures between 290 and 580 K. The refractive index in the transparent spec tral region has been determined as a function of photon energy, using the K ramers-Kronig relations with suitable approximations, and applying a multil ayer model. An analytical expression for the composition and temperature de pendent refractive index in the transparent region, above room temperature, has been obtained. The refractive index has been found to increase with in creasing temperature. The shift of the refractive index is strongest for Ga N and decreases for AlGaN with increasing aluminum molar fraction. The impa ct on the properties of GaN based waveguides is illustrated by a slab waveg uide calculation. (C) 2001 American Institute of Physics.