Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures

The pseudodielectric function spectra [epsilon] of wurtzite GaN, AlGaN, and GaN/AlGaN heterostructures were determined for photon energies ranging fro m 2 to 5 eV, using variable angle spectroscopic ellipsometry (SE). Samples were grown by low-pressure metalorganic chemical vapor deposition on c-plan e sapphire substrates. The experimental [epsilon] spectra were analyzed usi ng a multilayer approach, describing the dielectric functions of the indivi dual layers by a parametric oscillator model. In this way, parametric diele ctric function spectra of GaN and AlxGa1-xN (x less than or equal to 0.16) were derived, as well as the composition dependence of the AlxGa1-xN band g ap energy. The SE band gap data were found to be consistent with a bowing p arameter close to 1 eV. Finally, the GaN and AlxGa1-xN parametric dielectri c functions were used to quantitatively analyze the pseudodielectric functi on spectrum of GaN/AlGaN modulation doped field effect transistor structure s, demonstrating the potential of SE in combination with a multilayer param etric dielectric function model for nondestructive ex situ control of GaN/A lGaN device structures. (C) 2001 American Institute of Physics.