X-ray photoelectron spectroscopy and micro-Raman analysis of conductive RuO2 thin films

Ruthenium oxide (RuO2) was synthesized in thin film and powder forms using the solution chemistry technique. The oxide electrodes on Si substrates wer e characterized in terms of their structure, composition, stoichiometry, an d conductivity. X-ray lattice parameter calculations and micro-Raman analys is revealed the rutile structure in the material. Both films and powders ex hibited an unassigned Raman band at about 477 cm(-1) in their Raman spectra . Performing peak frequency calculations for B-2g and A(1g) modes of RuO2 u sing the rigid-ion model, which ruled out the possibility that this band or iginated from disorder induced symmetry, allowed silent mode. Based on the x-ray photoelectron spectroscopy (XPS) and temperature dependent Raman stud ies, this band was assigned to hydrated RuO2. XPS characterizations of our samples revealed minute surface contamination of oxygen and chlorine, proba bly due to the film preparation and high temperature deposition processes. Films with uniform microstructure, low surface roughness, and good electric al properties meet the requirements for serving as the bottom electrode for the ferroelectric capacitor. (C) 2001 American Institute of Physics.