Epitaxial NiO hillocks on truncated octahedral nanoparticles of passivatedNi

Citation
Ys. Kwok et al., Epitaxial NiO hillocks on truncated octahedral nanoparticles of passivatedNi, J APPL PHYS, 89(5), 2001, pp. 3061-3063
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
5
Year of publication
2001
Pages
3061 - 3063
Database
ISI
SICI code
0021-8979(20010301)89:5<3061:ENHOTO>2.0.ZU;2-W
Abstract
Epitaxial NiO hillocks on the {111} and {001} facets of truncated octahedra l nanoparticles of Ni have been directly observed by high-resolution transm ission electron microscopy. These nanometer hillocks form a rough shell enc losing the Ni nanoparticle. The epitaxial relationships of NiO on nanoparti cles of Ni are the same as those of NiO on bulk Ni {111} and {001} surfaces . The formation of hillocks is related to the relaxation of the compressive stress in NiO arising from the very large lattice mismatch between NiO and Ni. The compressively stressed epitaxial NiO shell provides effective prot ection to the nanoparticles of Ni against further oxidation. (C) 2001 Ameri can Institute of Physics.