Warpage measurement on dielectric rough surfaces of microelectronics devices by far infrared Fizeau interferometry

Far infrared Fizeau interferometry is developed and it is proposed as a too l for warpage measurement of microelectronics devices. The method provides a whole-field map of surface topography with a basic measurement sensitivit y of 5.31 mum per fringe contour. The method is implemented by a compact ap paratus using a computer controlled environmental chamber for real-time mea surement. The method retains the simplicity of classical interferometry whi le providing wide applicability to dielectric rough surfaces. Roughness tol erance is achieved by utilizing a far infrared light (lambda = 10.6 mum). T he detailed optical and mechanical configuration is described and selected applications are presented to demonstrate the applicability. The unique adv antages of the method are discussed. [S1043-7398(00)01303-7].