Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

The optical properties and the band lineup in GaNAs/GaAs single quantum wel ls (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL ) technique were investigated. It was found that the low-temperature PL is dominated by the intrinsic localized exciton emission. By fitting the exper imental datawith a simple calculation, band offset of the GaN0.015As0.985/G aAs heterostructure was estimated. Moreover, DeltaE(c), the discontinuity o f the conduction band was found to be a nonlinear function of the nitrogen composition (chi) and the average variation of DeltaE(c) is about 0. 110eV per % N, such smaller than that reported on the literature to (0.156 simila r to 0.175 eV/N %). In addition, Qc has little change whtn N composition in creares, with an experimential relation of QC approximate tox(0.25). The ba nd bowing coefficient (b) was also studied in this paper. The measured band bowing coefficient shows a strong function of chi, giving an experimental support to the theoretic calculation of Wei Su-Huai and Zunger Alex (1996).