Investigation on InGaAs/InAlAs quantum cascade lasers

Authors
Zhang, QS Liu, FQ Zhang, YZ Wang, ZG Gao, HH Krier, A
Citation
Qs. Zhang et al., Investigation on InGaAs/InAlAs quantum cascade lasers, J INF M W, 20(1), 2001, pp. 41-43
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
10019014 → ACNP
Volume
20
Issue
1
Year of publication
2001
Pages
41 - 43
Database
ISI
SICI code
1001-9014(200102)20:1<41:IOIQCL>2.0.ZU;2-8
Abstract
The preparation and main characteristics of the InGaAs/InAlAs quantum casca de laser were given. The device has a reinforced ridge waveguide structure. The threshold current obtained at 80K is about 0. 5A, and the correspondin g threshold current density is about 5kA/cm(2).