Preparation of (Ba0.5Sr0.5)TiO3 thin film by sol-gel technique and its characteristics

Authors
Zhao, M Zhang, RJ Gu, HS Chen, MN
Citation
M. Zhao et al., Preparation of (Ba0.5Sr0.5)TiO3 thin film by sol-gel technique and its characteristics, J INF M W, 20(1), 2001, pp. 73-76
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF INFRARED AND MILLIMETER WAVES
ISSN journal
10019014 → ACNP
Volume
20
Issue
1
Year of publication
2001
Pages
73 - 76
Database
ISI
SICI code
1001-9014(200102)20:1<73:PO(TFB>2.0.ZU;2-R
Abstract
(Ba0.5Sr0.5)TiO3 ferroelectric thin films were prepared by Sol-Gel processi ng. Films with thickness of 160nm treated at 700 degreesC for 1h showed pur e perovskite structure and good dielectric, insulating properties, i.e. a d ielectric constant of 225, a dielectric loss of 0.044, a leakage current de nsity of 8.0x10(-8)A/cm(2). The leakage current density was found to depend on the annealing temperature. The measurement of the J-V characteristics o n films indicated the conduction process to be bulk-limited.