Ta/NiO/NiFe/Ta multilayers, utilizing Ta as the buffer layer, were prepared
by RF reactive and DC magnetron sputtering. The exchange coupling field be
tween NiO and NiFe reached a maximum value of 120 Oe at a NiO film thicknes
s of 50 nm. The composition and chemical state at the interface region of T
a/NiO/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and
peak decomposition technique. The results show that there is an 'intermixin
g layer' at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically fa
vorable reaction: 2Ta + 5NiO = 5Ni + Ta2O5. This interface reaction has an
effect on the exchange coupling. The thickness of the 'intermixing layer' a
s estimated by XPS depth-profiles was about 8-10 nm. (C) 2001 Elsevier Scie
nce B.V. All rights reserved.