Factors affecting photosensitivity enhancement of chemically amplified photoresists by an acid amplifier

Citation
K. Arimitsu et al., Factors affecting photosensitivity enhancement of chemically amplified photoresists by an acid amplifier, J MAT CHEM, 11(2), 2001, pp. 295-301
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS CHEMISTRY
ISSN journal
09599428 → ACNP
Volume
11
Issue
2
Year of publication
2001
Pages
295 - 301
Database
ISI
SICI code
0959-9428(2001)11:2<295:FAPEOC>2.0.ZU;2-3
Abstract
The acid proliferation reaction of tert-butyl 2-methyl-2-(tosyloxymethyl)ac etoacetate to liberate the corresponding sulfonic acid by the action of a t iny amount of photogenerated acid was investigated in positive- and negativ e-working chemically amplified photoresists. The addition of the acetoaceta te as an acid amplifier to the photoresists resulted in a marked improvemen t in contrast, while the level of photosensitivity enhancement was relative ly small for both types of photoresists, showing that the inconspicuous enh ancement of photosensitivity is due to the suppression of the diffusion of acidic species in polymer films. The marked improvement of photosensitivity was achieved by the fabrication of novel double-layered photoresists doped with the acid amplifier.