Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors

Authors
Hibbert, TG Mahon, MF Molloy, KC Price, LS Parkin, IP
Citation
Tg. Hibbert et al., Deposition of tin sulfide thin films from novel, volatile (fluoroalkythiolato)tin(IV) precursors, J MAT CHEM, 11(2), 2001, pp. 469-473
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS CHEMISTRY
ISSN journal
09599428 → ACNP
Volume
11
Issue
2
Year of publication
2001
Pages
469 - 473
Database
ISI
SICI code
0959-9428(2001)11:2<469:DOTSTF>2.0.ZU;2-H
Abstract
Novel, volatile (fluoroalkylthiolato)tin(iv) precursors have been synthesis ed and (CF3CH2S)(4)Sn used to deposit tin sulfide films under APCVD (atmosp heric pressure chemical vapour deposition) conditions. H2S is, however, req uired as co-reactant. Films deposited at 300-400 degreesC are composed of s ulfur-deficient SnS2, films deposited at 450 and 500 degreesC comprise the sesquisulfide, Sn2S3, and the films deposited at 550 or 600 degreesC are su lfur-deficient SnS. The structure of [CF3(CF2)(5)CH2CH2S](4)Sn is also repo rted.