Thin films of La1-xSrxMnO3+delta (x = 0.05, 0.10, 0.14) on LaAlO3 substrate
have been prepared by employing spin coating methods. The as-prepared film
s crystallized at 1223 K in 1 atm oxygen show a complete in-plane epitaxy a
nd exhibit singlecrystal-like transport properties without intergrain spin-
polarized scattering. In order to reduce excess oxygen, the as-prepared fil
ms were further heat-treated in 1-20 Pa oxygen at 873 to 1073 K. The excess
oxygen content delta in the films was evaluated by assuming linear depende
nce of entropy and enthalpy of defect formation against Sr content x- in th
e Roosmalen's defect model, The measured lattice parameters on these oxygen
-reduced films show good agreement with the d values from the above defect
model. Both the calculated and the experimental results show that Mn4+ prop
ortion for the as-prepared films is almost independent of Sr doping level x
, and in order to get films without excess oxygen, the films must be treate
d in 1 Pa oxygen at 1073 K. The magnetic and transport properties measured
on these films show higher T-c than the published electric phase diagram fr
om the single crystal samples. We assumed that the La site vacancy intrinsi
cally incorporated in the single-crystal samples during the growth process
might be the cause of this difference. (C) 2001 Academic Press.