Excess oxygen in low Sr doping La1-xSrxMnO3+delta epitaxial films

Citation
K. Nakamura et al., Excess oxygen in low Sr doping La1-xSrxMnO3+delta epitaxial films, J SOL ST CH, 156(1), 2001, pp. 143-153
Citations number
19
Categorie Soggetti
Inorganic & Nuclear Chemistry
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
ISSN journal
00224596 → ACNP
Volume
156
Issue
1
Year of publication
2001
Pages
143 - 153
Database
ISI
SICI code
0022-4596(200101)156:1<143:EOILSD>2.0.ZU;2-S
Abstract
Thin films of La1-xSrxMnO3+delta (x = 0.05, 0.10, 0.14) on LaAlO3 substrate have been prepared by employing spin coating methods. The as-prepared film s crystallized at 1223 K in 1 atm oxygen show a complete in-plane epitaxy a nd exhibit singlecrystal-like transport properties without intergrain spin- polarized scattering. In order to reduce excess oxygen, the as-prepared fil ms were further heat-treated in 1-20 Pa oxygen at 873 to 1073 K. The excess oxygen content delta in the films was evaluated by assuming linear depende nce of entropy and enthalpy of defect formation against Sr content x- in th e Roosmalen's defect model, The measured lattice parameters on these oxygen -reduced films show good agreement with the d values from the above defect model. Both the calculated and the experimental results show that Mn4+ prop ortion for the as-prepared films is almost independent of Sr doping level x , and in order to get films without excess oxygen, the films must be treate d in 1 Pa oxygen at 1073 K. The magnetic and transport properties measured on these films show higher T-c than the published electric phase diagram fr om the single crystal samples. We assumed that the La site vacancy intrinsi cally incorporated in the single-crystal samples during the growth process might be the cause of this difference. (C) 2001 Academic Press.