Development of dielectric properties of niobium oxide, tantalum oxide, andaluminum oxide based nanolayered materials

Nb2O5, Ta2O5, and Al2O3 solid solutions and nanolaminates were grown using atomic layer deposition technique. Electrical properties of the materials d eposited were comparatively characterized be studying the behavior of Al/ni obium-aluminum (tantalum) oxide/indium-tin oxide capacitor structures. The films with high Nb content demonstrated high polarizability and leakage cur rent density. The films with high Al content demonstrated low leakage curre nt densities. The leakage currents in Nb-based films were reduced by deposi ting thin alternate layers of Al2O3 Or Ta2O5 and Nb2O5, thereby increasing the number of interfaces between distinct oxide layers. The permittivity of Nb2O5:Al2O3 films could be increased with Nb2O5 concentration without cons iderable loss in resistivity. (C) 2001 The Electrochemical Society. All rig hts reserved.