Field emission from ultrathin coatings of AlN on Mo emitters

Citation
D. Kang et al., Field emission from ultrathin coatings of AlN on Mo emitters, J VAC SCI B, 19(1), 2001, pp. 50-54
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
1
Year of publication
2001
Pages
50 - 54
Database
ISI
SICI code
1071-1023(200101/02)19:1<50:FEFUCO>2.0.ZU;2-Z
Abstract
Experiments characterizing both the physics of emission and the performance of Mo tips coated with ultrathin Nm of AW were conducted. Ultrathin films of AIN with thicknesses ranging from 7 to 21 nm in 1.5 nm increments were d eposited onto Mo tips by magnetron sputtering. In situ field emission measu rements were performed after each deposition step. Tip radius, thickness, a nd morphology of AlN coating were characterized with the transmission elect ron microscopy. The effect of the thickness of AIN on emission was determin ed using a Fowler-Nordheim analysis. Various surface treatment effects were studied and measurements of maximum current and emission stability were pe rformed, e.g., maximum current from a single Mo tip with 15 nm of AlN coati ng was 52 muA. (C) 2001 American Vacuum Society.