Wide-band gap semiconductors for noncontact thermometry

Authors
Citation
S. Salvatori, Wide-band gap semiconductors for noncontact thermometry, J VAC SCI B, 19(1), 2001, pp. 219-223
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
1
Year of publication
2001
Pages
219 - 223
Database
ISI
SICI code
1071-1023(200101/02)19:1<219:WGSFNT>2.0.ZU;2-N
Abstract
The advantages achieved in two-color optical pyrometry using wide-band gap semiconductors (e.g., silicon carbide, gallium arsenide) and silicon-based photosensors for short- and long-wavelength light detection, respectively, are demonstrated here. Spectral responsivities of Si-, SIC-, and GaN-based photodiodes are used to evaluate the performances of a simple ratio pyromet er. Compared to conventional near-infrared ratio pyrometers, it is shown th at high-energy photon detection is able to reduce temperature measurement e rrors-mainly induced by spectral variation of the target emissivity-by more than 1 order of magnitude and allows increased output dynamics of the pyro meter of up to 4 orders of magnitude. (C) 2001 American Vacuum Society.