Nanolithography using ultrasonically assisted development of calixarene negative electron beam resist

Authors
Yasin, S Hasko, DG Carecenac, F
Citation
S. Yasin et al., Nanolithography using ultrasonically assisted development of calixarene negative electron beam resist, J VAC SCI B, 19(1), 2001, pp. 311-313
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
1
Year of publication
2001
Pages
311 - 313
Database
ISI
SICI code
1071-1023(200101/02)19:1<311:NUUADO>2.0.ZU;2-Z
Abstract
Negative resist image distortion is caused by resist swelling during develo pment and is a major problem in ultrahigh resolution electron beam lithogra phy. This problem has been overcome through the use of ultrasonically assis ted development. In addition, exposure dose latitude is increased by 50% co mpared to conventional dip development, due to the improvement in contrast. These advantages have been exploited in order to realize similar to6 nm wi de lines in calixarene resist. (C) 2001 American Vacuum Society.