By ablating a silicon monoxide target with a pulsed KrF excimer laser at 12
00 degreesC in an Ar atmosphere, we have achieved production of high-purity
Si nanowires in bulk quantities. The yield and linear growth rate can reac
h 30 mg/h and 500 mum/h, respectively. Transmission electron micrographs sh
ow that the sample of silicon nanowires consists of few nanoparticles. (C)
2001 American Vacuum Society.