Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth

Authors
Adikan, FRM Mahdi, MA Thirumeni, S Poopalan, P Dimyati, K Ahmad, H
Citation
Frm. Adikan et al., Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth, MICROW OPT, 28(6), 2001, pp. 399-402
Citations number
9
Categorie Soggetti
Optics & Acoustics
Journal title
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
ISSN journal
08952477 → ACNP
Volume
28
Issue
6
Year of publication
2001
Pages
399 - 402
Database
ISI
SICI code
0895-2477(20010320)28:6<399:NGLEWA>2.0.ZU;2-4
Abstract
A simple gain-flattened L-band erbium-doped fiber amplifier (EDFA) is demon strated, utilizing unwanted C-band amplified spontaneous emission (ASE) to enhance L-bulld gain performance. An L-band flat gain range of 50 nm (1560- 1610 nm) is achieved for use in wavelength-division multiplexing (WDM) tran smission systems. Gain flatness with a 3 dB gain discrepancy is obtained th rough manipulation of the pump power. (C) 2001 John Wiley & Sons, Inc.