We present parameter-free calculations of electronic properties of InxGa1-x
N alloys based on a generalized quasichemical approach and a pseudopotentia
l-plane-wave method. The gap fluctuations in the alloy allow the definition
of a minimum gap and an average gap with different bowing parameters. Biax
ial strain drastically reduces the gap fluctuations, resulting in a reducti
on of the bowing. The different gaps and the strain influence investigated
here provide an explanation for the discrepancies found in the experimental
values of the bowing parameter.