Z. Gai et al., Si(313) 12 x 1: Another metallic stable surface of silicon having a complex reconstructed layer - art. no. 085301, PHYS REV B, 6308(8), 2001, pp. 5301
By means of scanning tunneling microscopy, the Si(313)12 x 1 surface has be
en found to be, after Si(111)7 x 7, another stable elemental semiconductor
surface with a metallic nature. On the basis of the details revealed by the
high resolution STM images, an atomically rough model consisting of trench
es and a variety of building entities has been proposed for the surface str
ucture for further investigation. The common features of major stable silic
on surfaces as well as the similarities and differences between these surfa
ces and their germanium counterparts are discussed in the context of the dr
iving forces behind the reconstruction of elemental semiconductor surfaces.