Atomic-resolution incoherent high-angle annular dark field STEM images of Si(011) - art. no. 085316

Citation
F. Watanabe et al., Atomic-resolution incoherent high-angle annular dark field STEM images of Si(011) - art. no. 085316, PHYS REV B, 6308(8), 2001, pp. 5316
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6308
Issue
8
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010215)6308:8<5316:AIHADF>2.0.ZU;2-7
Abstract
Characteristic atomic-resolution incoherent high-angle annular dark field ( HAADF) scanning transmission electron microscope (STEM) images of [011]-ori entated Si have been experimentally obtained by a through-focal series. Art ificial bright spots appear at positions where no atomic columns exist alon g the electron beam, in some experimental images. Image simulation, based o n the Bloch wave description by the Bethe method, reproduces the through-fo cal experimental images. It is shown that atomic-resolution HAADF STEM imag es, which are greatly influenced by the Bloch wave field depending on the i ncident electron beam probe, cannot always be interpreted intuitively as th e projected atomic images. It is also found that the atomic-resolution HAAD F STEM images can be simply explained using the relations to the probe func tions without the need for complex dynamical simulations.