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Far-infrared photoresponse of the magnetoresistance of the two-dimensionalelectron systems in the integer quantized Hall regime - art. no. 085320

Authors

Hirakawa, K Yamanaka, K Kawaguchi, Y Endo, M Saeki, M Komiyama, S

Citation

K. Hirakawa et al., Far-infrared photoresponse of the magnetoresistance of the two-dimensionalelectron systems in the integer quantized Hall regime - art. no. 085320, PHYS REV B, 6308(8), 2001, pp. 5320

Citations number

Categorie Soggetti

Apllied Physucs/Condensed Matter/Materiales Science

Journal title

PHYSICAL REVIEW B

ISSN journal

01631829 → ACNP

Volume

6308

Issue

Year of publication

2001

Database

ISI

SICI code

0163-1829(20010215)6308:8<5320:FPOTMO>2.0.ZU;2-W

Abstract

We have investigated the far-infrared (FIR) photoinduced resistance change of the two-dimensional electron systems in AlxGa1-xAs/GaAs heterojunctions in the integer quantized Hall regime. Sensitive photoinduced resistance cha nge DeltaR(xx) is observed only in the vicinity of the quantum Hall states. It is found that the magnitude and polarity of DeltaR(xx) strongly depend on the Landau-level filling factor and the bias current. We have shown that not only a bolometric effect (i.e., electron heating) but also an electron ic process due to edge channel transport is responsible for the observed be havior of DeltaR(xx). The observed photoresponse can be used for realizing very sensitive, narrow-band FIR detectors.