Direct determination of Debye temperature and electron-phonon interaction in 1T-VSe2 - art. no. 073107

Citation
Gv. Kamarchuk et al., Direct determination of Debye temperature and electron-phonon interaction in 1T-VSe2 - art. no. 073107, PHYS REV B, 6307(7), 2001, pp. 3107
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6307
Issue
7
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010215)6307:7<3107:DDODTA>2.0.ZU;2-I
Abstract
Crystals of the layered two-dimensional transition-metal dichalcogenide 1 T -VSe2 are investigated by point-contact spectroscopy in the charge-density wave state. Relevant characteristics such as mean, root-mean-square, and De bye phonon frequencies are obtained. The Debye temperature is Theta (D) = 2 20 +/- 5 K, close to that of 2H-NbSe2. The point-contact function g(pc)(ome ga) of the electron-phonon interaction reveals a moderate coupling constant lambda (pc) = 0.27. Consequently, the Coulomb potential, the density of st ates at the Fermi level, and the deformation potential are estimated to be of order 0.22 eV, 2.5 states/eV, and 0.22 eV/Angstrom, respectively.