Cj. Glover et al., Structural-relaxation-induced bond length and bond angle changes in amorphized Ge - art. no. 073204, PHYS REV B, 6307(7), 2001, pp. 3204
Low-temperature structural relaxation in amorphized Ge has been characteriz
ed by extended x-ray-absorption fine-structure spectroscopy and Raman spect
roscopy. A relaxation-temperature-dependent decrease in the mean value and
asymmetry of the interatomic distance distribution has been shown to accomp
any the well-documented reduction in bond angle distribution. While the ini
tial, as-implanted state of amorphous Ge was ion-dose dependent, relaxation
at 200 degreesC yielded a common ion-dose-independent interatomic distance
distribution. The heat release upon structural relaxation due to reduction
s in both bond length and bond angle distortion was calculated separately a
nd the former exhibited an ion-dose dependence. The results provide compell
ing support for the defect annihilation model of structural relaxation and
imply that the heat release upon structural relaxation should be implant-co
ndition dependent.