Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots - art. no. 073307

Citation
Jj. Finley et al., Charged and neutral exciton complexes in individual self-assembled In(Ga)As quantum dots - art. no. 073307, PHYS REV B, 6307(7), 2001, pp. 3307
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6307
Issue
7
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010215)6307:7<3307:CANECI>2.0.ZU;2-H
Abstract
Charged (X*) and neutral (X) exciton recombination is reported in the photo luminescence spectra of single In(Ga)As quantum dots. Photoluminescence exc itation (PLE) spectra show that the charged excitons are created only for e xcitation in the barrier or cladding layers of the structure, consistent wi th their charged character, whereas the neutral excitons in addition show w ell-defined excitation features for resonant excitation of the dots. The PL E spectra for X and X* exhibit a clear anticorrelation in the region of the wetting layer transition, showing that they compete for photocreated carri ers.