Coulomb blockade in one-dimensional arrays of high-conductance tunnel junctions - art. no. 075309

Properties of one-dimensional (1D) arrays of low ohmic tunnel junctions (i. e., junctions with resistances comparable to, or less than, the quantum res istance R-q=h/e(2) approximate to 25.8 k Omega) have been studied experimen tally and theoretically. Our experimental data demonstrate that-in agreemen t with previous results on single- and double-junction systems-Coulomb bloc kade effects survive even in the strong tunneling regime and are still clea rly visible for junction resistances as low as 1 k Omega. We have developed a quasiclassical theory of electron transport in junction arrays in the st rong tunneling regime. Good agreement between the predictions of this theor y and the experimental data has been observed. We also show that, due to bo th heating effects and a relatively large correction to the linear relation between the hair-width of the conductance dip around zero bias voltage, V- 1/2 and the measured electronic temperature, such arrays are inferior to th ose conventionally used in the Coulomb blockade thermometry (CBT). Still, t he desired correction to the half-width, DeltaV(1/2). can be determined rat her easily and it is proportional to the magnitude of the conductance dip a round zero bias voltage, DeltaG. The constant of proportionality is a funct ion of the ratio of the junction and quantum resistances, R/R-q, and it is a pure strong tunneling effect.