A new magnetic semiconductor Cd1-xMnxGeP2

A new semiconductor material, which comprises a solid solution of a ternary diamond-like semiconductor and transition element Mn, was grown and invest igated. According to X-ray diffraction data, the crystal structure of the m aterial is similar to that of the CdGeP2 host substance with a chalcopyrite -type crystal structure. The interplanar distances and the unit cell parame ter decrease with an increase in Mn content: a = 5.741 Angstrom --> 5.710 A ngstrom --> 5.695 Angstrom in the series of CdGeP2 --> Cd1-xMnxGeP2 --> Cd1 -yMnyGeP2 compounds (x < y). The surface composition and in-depth concentra tion profiles for elements of a Cd-Mn-Ge-P quaternary system were investiga ted using electron microscopy and energy dispersive X-ray spectroscopy. The molecular concentration ratio for Mn and Cd at a depth of 0.4 mum is Mn/Cd = 0.2. (C) 2001 MAIK "Nauka/ Interperiodica".