Temperature dependence of a magnetoresistance effect in the films of ferromagnetic semiconductors based on oxides of rare-earth elements

Citation
Vf. Kabanov et al., Temperature dependence of a magnetoresistance effect in the films of ferromagnetic semiconductors based on oxides of rare-earth elements, SEMICONDUCT, 35(3), 2001, pp. 295-297
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
3
Year of publication
2001
Pages
295 - 297
Database
ISI
SICI code
1063-7826(2001)35:3<295:TDOAME>2.0.ZU;2-P
Abstract
A temperature dependence of a positive magnetoresistance effect for films o f certain oxides of rare-earth elements (Gd, Eu, and a Eu-Sm solid solution ) close to the Curie temperature was considered and analyzed. It was demons trated that the temperature dependence of the effect and the effect sign an d magnitude are determined by the dependence of a magnetic moment for a mag netic cluster on both an external magnetic field strength and film paramete rs. These are the spin of the magnetic ion, exchange energy, defect density , etc. (C) 2001 MAIK "Nauka/ Interperiodica".