On the stabilization of electrical properties of compensated silicon as a result of irradiation with Co-60 gamma-ray quanta

Authors
Yunusov, MS Karimov, M Dzhalelov, MA
Citation
Ms. Yunusov et al., On the stabilization of electrical properties of compensated silicon as a result of irradiation with Co-60 gamma-ray quanta, SEMICONDUCT, 35(3), 2001, pp. 302-305
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
3
Year of publication
2001
Pages
302 - 305
Database
ISI
SICI code
1063-7826(2001)35:3<302:OTSOEP>2.0.ZU;2-E
Abstract
A change in the charge-carrier concentration in compensated silicon (obtain ed by preliminary irradiation) as a result of gamma-ray irradiation was stu died. It was found that the removal rate of charge carriers in compensated silicon is lower than in the reference sample. A new mechanism responsible for the immunity of electrical properties of compensated silicon to radiati on is discussed. (C) 2001 MAIK "Nauka/Interperiodica".