Ms. Yunusov et al., On the stabilization of electrical properties of compensated silicon as a result of irradiation with Co-60 gamma-ray quanta, SEMICONDUCT, 35(3), 2001, pp. 302-305
A change in the charge-carrier concentration in compensated silicon (obtain
ed by preliminary irradiation) as a result of gamma-ray irradiation was stu
died. It was found that the removal rate of charge carriers in compensated
silicon is lower than in the reference sample. A new mechanism responsible
for the immunity of electrical properties of compensated silicon to radiati
on is discussed. (C) 2001 MAIK "Nauka/Interperiodica".