Capacitance-voltage characteristics of p-n structures based on (111)Si doped with erbium and oxygen

Capacitance-voltage characteristics of tunneling diodes fabricated by co-im plantation of erbium and oxygen in single-crystal (111)Si wafers have been studied. Anomalous enhancement of the p-n-junction capacitance with increas ing reverse bias has been observed at certain temperatures depending on the implantation dose. The rise in capacitance (decrease in the space charge r egion width) is associated with the formation of deep levels of high densit y in the band gap of n-layer of the p-n junction and electron emission from these levels in the space charge region with increasing voltage. The obtai ned results show that the parameters of the defects responsible for the lev els depend on the erbium and oxygen implantation doses. (C) 2001 MAIK "Nauk a/ Interperiodica".