Negative luminescence in p-InAsSbP/n-InAs diodes

Authors
Aidaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN
Citation
M. Aidaraliev et al., Negative luminescence in p-InAsSbP/n-InAs diodes, SEMICONDUCT, 35(3), 2001, pp. 321-324
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
3
Year of publication
2001
Pages
321 - 324
Database
ISI
SICI code
1063-7826(2001)35:3<321:NLIPD>2.0.ZU;2-Q
Abstract
Negative luminescence (NL) at lambda (max) = 3.8 mum from reverse-biased p- InAsSbP/n-InAs diode heterostructures has been studied at temperatures of 7 0-180 degreesC. The NL power increases with temperature and exceeds the pow er of direct-bias electroluminescence at temperatures over 110 degreesC. An NL power of 5 mW/cm(2), efficiency of 60%, and a conversion efficiency of 25 mW/(A cm(2)) have been obtained at 160 degreesC. (C) 2001 MAIK "Nauka/In terperiodica".