Characterization of electroluminescent structures based on gallium arsenide ion-implanted with ytterbium and oxygen

Authors
Palmer, DW Dravin, VA Konnov, VM Bobrova, EA Loiko, NN Chernook, SG Gippius, AA
Citation
Dw. Palmer et al., Characterization of electroluminescent structures based on gallium arsenide ion-implanted with ytterbium and oxygen, SEMICONDUCT, 35(3), 2001, pp. 325-330
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
3
Year of publication
2001
Pages
325 - 330
Database
ISI
SICI code
1063-7826(2001)35:3<325:COESBO>2.0.ZU;2-3
Abstract
Light-emitting diodes based on GaAs crystals ion-implanted with ytterbium a nd oxygen were fabricated. The current-voltage and capacitance-voltage char acteristics of these diodes were analyzed. The deep-level centers were stud ied by the deep-level transient spectroscopy. The electroluminescence spect ra of the structures include the emission lines related to optical transiti ons within the 4f shell of Yb3+ ions. (C) 2001 MAIK "Nauka/Interperiodica".