Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties

Magnetotransport properties of the narrow-gap InxGa1-xAsySb1-y/GaSb heteroj unctions grown by liquid-phase epitaxy with various In content in the solid solution (x = 0.85-0.95 and E-g less than or equal to 0.4 eV) were studied . It is shown that, depending on the In content in these heterostructures, type II staggered-lineup (x = 0.85) or broken-gap heterojunctions (x = 0.95 ) with high mobility in the electron channel at the interface (mu similar o r equal to 20 000 cm(2)/(V s)) can be realized. For x = 0.92, depending on temperature, both types of heterojunctions were observed. Obtained results are in good agreement with the band energy diagram of the type II InGaAsSb/ GaSb heterostructures under study. (C) 2001 MAIK "Nauka/Interperiodica".