Electrical and photoelectric properties of a-Si : H layered films: The influence of thermal annealing

Citation
Ia. Kurova et al., Electrical and photoelectric properties of a-Si : H layered films: The influence of thermal annealing, SEMICONDUCT, 35(3), 2001, pp. 353-356
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
3
Year of publication
2001
Pages
353 - 356
Database
ISI
SICI code
1063-7826(2001)35:3<353:EAPPOA>2.0.ZU;2-Q
Abstract
The electrical and photoelectric properties of layered a-Si:H films obtaine d by cyclic plasmochemical deposition and the effect of thermal annealing o n these properties have been studied. Unannealed films demonstrate high pho tosensitivity, with a photoconductivity to dark conductivity ratio of K = 3 .4 x 10(6). Increasing the annealing temperature causes the film photosensi tivity to fall because of a considerable decrease in the photoconductivity and increase in the dark conductivity. For films annealed at temperatures a bove 500 degreesC, the conductivity is the sum of the band conductivity and the hopping conductivity via states at the Fermi level. (C) 2001 MAIK "Nau ka/Interperiodica".