Electrical and photoelectric properties of a-Si : H layered films: The influence of thermal annealing

The electrical and photoelectric properties of layered a-Si:H films obtaine d by cyclic plasmochemical deposition and the effect of thermal annealing o n these properties have been studied. Unannealed films demonstrate high pho tosensitivity, with a photoconductivity to dark conductivity ratio of K = 3 .4 x 10(6). Increasing the annealing temperature causes the film photosensi tivity to fall because of a considerable decrease in the photoconductivity and increase in the dark conductivity. For films annealed at temperatures a bove 500 degreesC, the conductivity is the sum of the band conductivity and the hopping conductivity via states at the Fermi level. (C) 2001 MAIK "Nau ka/Interperiodica".