Optically pumped mid-infrared InGaAs(Sb) LEDs

Authors
Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN Shustov, VV
Citation
Nv. Zotova et al., Optically pumped mid-infrared InGaAs(Sb) LEDs, SEMICONDUCT, 35(3), 2001, pp. 357-359
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
3
Year of publication
2001
Pages
357 - 359
Database
ISI
SICI code
1063-7826(2001)35:3<357:OPMIL>2.0.ZU;2-6
Abstract
Spectral and power characteristics of optically pumped light-emitting diode s (LEDs) for the 3.1-3.6 mum range are presented. The LED structure contain s narrow-gap InGaAs or InGaAsSb layers on an n(+)-InAs substrate; the pumpi ng is done with a GaAs LED. A conversion efficiency of 90 mW/(A cm(2)), com parable with that for injection LEDs, is achieved. (C) 2001 MAIK "Nauka/Int erperiodica".