The field dependence of photoemission currents in a MIS structure was deriv
ed for the case when the space charge is randomly distributed over the insu
lating layer. It was found analytically that the position of the top of the
potential barrier for electrons photoinjected from the gate into the insul
ator is defined by the derivative of this barrier with respect to the exter
nal field strength. A method for correctly determining the space charge pro
file in a MIS insulator is suggested. The profile is derived from a family
of spectral characteristics taken at different gate voltages. The method is
especially suitable for profiling the negative charge in MIS insulators. (
C) 2001 MAIK "Nauka/Interperiodica".