Preparation of thin copper films from the vapour phase of volatile copper(I) and copper(II) derivatives by the CVD method

The main chemical aspects of the preparation of thin copper films from vapo urs of volatile univalent and divalent, copper derivatives used as precurso rs in the MOCVD technique, are considered. Data on the methods of synthesis and properties of various types of these compounds are generalised and des cribed systematically. The possible decomposition mechanisms of copper comp ounds under CVD conditions are discussed. The prospects for the use of MOCV D technology for the preparation of thin copper films in the integrated cir cuits of microelectronic devices are outlined.