Near-field photocurrent imaging of the optical mode profiles of semiconductor laser diodes

The potential of near-field photocurrent spectroscopy for direct imaging of mode profiles of submicron-sized waveguides in optoelectronic devices is d emonstrated. The technique combines the submicron spatial resolution of nea r-field optics with tunable laser excitation, allowing for selective invest igation of the waveguide properties of the device structure. Experiments on InGaAs/AlGaAs high-power laser diodes with different waveguide designs pro vide direct visualization of the effect of the waveguide design on (i) the number of guided modes and (ii) the spatial profile of both fundamental and higher-order modes. The technique thus provides a sensitive tool for nonde structive in situ analysis of waveguide properties in optoelectronic device s. (C) 2001 American Institute of Physics.