V-shaped defects connected to inversion domains in AlGaN layers

Authors
Pecz, B Makkai, Z di Forte-Poisson, MA Huet, F Dunin-Borkowski, RE
Citation
B. Pecz et al., V-shaped defects connected to inversion domains in AlGaN layers, APPL PHYS L, 78(11), 2001, pp. 1529-1531
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
11
Year of publication
2001
Pages
1529 - 1531
Database
ISI
SICI code
0003-6951(20010312)78:11<1529:VDCTID>2.0.ZU;2-4
Abstract
Thick AlGaN layers and AlGaN/GaN superlattices have been grown on GaN using metalorganic chemical vapor deposition. Cross-sectional transmission elect ron microscopy has been used to show that V-shaped surface pits on these sa mples differ from similar features observed in the InGaN system. Inversion domains and segregated Al are found in the middle of each V pit, and superl attice layers are observed to follow the pit sidewalls. (C) 2001 American I nstitute of Physics.