Auger recombination in long-wavelength infrared InNxSb1-x alloys

Citation
Bn. Murdin et al., Auger recombination in long-wavelength infrared InNxSb1-x alloys, APPL PHYS L, 78(11), 2001, pp. 1568-1570
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
11
Year of publication
2001
Pages
1568 - 1570
Database
ISI
SICI code
0003-6951(20010312)78:11<1568:ARILII>2.0.ZU;2-C
Abstract
Dilute nitrogen alloys of InSb exhibit strong band gap bowing with increasi ng nitrogen composition, shifting the absorption edge to longer wavelengths . The conduction band dispersion also has an enhanced nonparabolicity, whic h suppresses Auger recombination. We have measured Auger lifetimes in alloy s with 11 and 15 mum absorption edges using a time-resolved pump-probe tech nique. We find the lifetimes to be longer at room temperature than equivale nt band gap Hg1-yCdyTe alloys at the same quasi-Fermi level separation. The results are explained using a modified k.p Hamiltonian which explicitly in cludes interactions between the conduction band and a higher lying nitrogen -related resonant band. (C) 2001 American Institute of Physics.