SiGeC/Si superlattice microcoolers

Monolithically integrated active cooling is an attractive way for thermal m anagement and temperature stabilization of microelectronic and optoelectron ic devices. SiGeC can be lattice matched to Si and is a promising material for integrated coolers. SiGeC/Si superlattice structures were grown on Si s ubstrates by molecular beam epitaxy. Thermal conductivity was measured by t he 3 omega method. SiGeC/Si superlattice microcoolers with dimensions as sm all as 40x40 mum(2) were fabricated and characterized. Cooling by as much a s 2.8 and 6.9 K was measured at 25 degreesC and 100 degreesC, respectively, corresponding to maximum spot cooling power densities on the order of 1000 W/cm(2). (C) 2001 American Institute of Physics.