Investigation of deep submicron single and double gate SOI MOSFETs in accumulation mode for enhanced performance

The behavior of single and double gate accumulation mode silicon-on-insulat or (SOI) metal oxide semiconductor field effect transistors (MOSFETs) is th oroughly investigated. Accumulation mode devices present advantages over in version mode transistors regarding transconductance, ease of fabrication, a nd parasitic effects. We have concluded, from experimental results and 2D s imulations, that short channel effects such as DIBL and subthreshold swing degradation are substantially reduced in the volume accumulation regime, be ing even lower in thin-film double gate accumulation mode SOI MOSFETs than in inversion mode double gate SOI devices for adequate technological charac teristics. The potential of thin-film accumulation mode SOI MOS transistors down to sub-0.1 mum technologies and up to 125 degrees C is demonstrated. (C) 2001 The Electrochemical Society.