Plasma chemistries for dry etching of SrBi2Ta2O9 thin films

Authors
Park, JS Im, YH Choi, RJ Hahn, YB Choi, CS Lee, SH Lee, JK
Citation
Js. Park et al., Plasma chemistries for dry etching of SrBi2Ta2O9 thin films, EL SOLID ST, 4(2), 2001, pp. G17-G19
Citations number
14
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
4
Issue
2
Year of publication
2001
Pages
G17 - G19
Database
ISI
SICI code
1099-0062(200102)4:2<G17:PCFDEO>2.0.ZU;2-X
Abstract
SrBi2Ta2O9 (SBT) thin films were etched in a planar type inductively couple d plasma (ICP) etcher with different chemistries of Cl-2/Ar, Cl-2/NF3/Ar, a nd Cl-2/NF3/O-2/Ar. The etch rate was a strong function of gas concentratio n, ICP source power, and rf chuck power. Cl-2/NF3/Ar and Cl-2/NF3/O-2/Ar pl asmas showed maximum etch rates of similar to 1600 Angstrom /min at 5 mTorr , 700 W ICP power, and 150 W rf chuck power. Electrical properties of the S BT films were dependent on the plasma chemistry employed; Cl-2/NF3/O-2/Ar s howed the least damage in the films and resulted in the best overall P-E hy steresis loops compared to other chemistries. (C) 2001 The Electrochemical Society.