InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m

Authors
Seassal, C Rojo-Romeo, P Letartre, X Viktorovitch, P Hollinger, G Jalaguier, E Pocas, S Aspar, B
Citation
C. Seassal et al., InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m, ELECTR LETT, 37(4), 2001, pp. 222-223
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
4
Year of publication
2001
Pages
222 - 223
Database
ISI
SICI code
0013-5194(20010215)37:4<222:IMLOSW>2.0.ZU;2-K
Abstract
Microdisk lasers are fabricated in an InP/InGaAs MQW heterostructure transf erred onto silicon. The CW room temperature laser operation of such devices at 1.6 mum is reported.