GaN/SiC p-n mesa junctions for HBTs fabricated using selective photoelectrochemical etching

Authors
Graff, JW Schubert, EF Osinsky, A
Citation
Jw. Graff et al., GaN/SiC p-n mesa junctions for HBTs fabricated using selective photoelectrochemical etching, ELECTR LETT, 37(4), 2001, pp. 249-250
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
4
Year of publication
2001
Pages
249 - 250
Database
ISI
SICI code
0013-5194(20010215)37:4<249:GPMJFH>2.0.ZU;2-Z
Abstract
GaN/SiC p-n junctions for heterojunction bipolar transistors have been fabr icated using photoelectrochemical etching. The process was shown to have ex cellent selectivity between n- and p-type semiconductors, self-terminating at the p-type SiC layer. Smooth p-SiC surfaces were observed, and contact r esistance on the etched surface of 3 x 10 (3)Omega cm(2) was achieved. This process has been used in the fabrication of HBTs.