Size- and temperature-independent zero-offset current-voltage characteristics of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors

Authors
Mochizuki, K Oka, T Ohbu, I
Citation
K. Mochizuki et al., Size- and temperature-independent zero-offset current-voltage characteristics of GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors, ELECTR LETT, 37(4), 2001, pp. 252-253
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
4
Year of publication
2001
Pages
252 - 253
Database
ISI
SICI code
0013-5194(20010215)37:4<252:SATZCC>2.0.ZU;2-Z
Abstract
The collector-emitter offset voltage of GaInP/GaAs collector-up tunnelling- collector heterojunction bipolar transistors (C-up TC-HBTs) was found to be almost zero (10-14mV) and independent of transistor size and temperature. These findings indicate that GaInP/GaAs C-up TC-HBTs are strong candidates for high-efficiency high-power amplifiers.