Textured and smooth AlN films prepared by Helicon sputtering system

Authors
Wu, CH Chiu, WY Kao, HL
Citation
Ch. Wu et al., Textured and smooth AlN films prepared by Helicon sputtering system, ELECTR LETT, 37(4), 2001, pp. 253-255
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
4
Year of publication
2001
Pages
253 - 255
Database
ISI
SICI code
0013-5194(20010215)37:4<253:TASAFP>2.0.ZU;2-U
Abstract
Highly-textured AlN films were obtained by using a Helicon sputtering syste m. This sputtering method was able to sustain the plasma in a gas atmospher e uf 10(-4)Torr, and, in turn, to improve the surface morphology of the fil m. The AlN film exhibits an extremely smooth surface with a root mean squar e roughness of only 3.2 Angstrom.