When a voltage is applied to double quantum wells based on AlGaAs/GaAs
heterostructures with contact regions (n-i-n structures), a two-dimen
sional (2D) electron gas appears in one of the quantum wells. Under il
lumination which generates electron-hole pairs, the photoexcited holes
become localized in a neighboring quantum well and recombine radiativ
ely with the 2D electrons (tunneling recombination through the barrier
). The appearance, ground-state energy, and density of the degenerate
2D electron gas are determined from the structure of the Landau levels
in the luminescence and luminescence excitation spectra as well as fr
om the oscillations of the radiative recombination intensity in a magn
etic field with detection directly at the Fermi level. The electron de
nsity is regulated by the voltage between the contact regions and incr
eases with the slope of the bands. For a fixed slope of the bands the
2D-electron density has an upper limit determined by the resonance tun
neling of electrons into a neighboring quantum well and subsequent dir
ect recombination with photoexcited holes. (C) 1997 American Institute
of Physics.