CHARACTERIZATION OF ULTRATHIN DOPING LAYERS IN SEMICONDUCTORS

The compositional profile of a narrow layer of InAsxP1-x in InP has be en determined using energy-filtered Fresnel contrast analysis, high-re solution electron microscopy (HREM), and high-angle annular dark-field (HAADF) imaging. The consistency of the results obtained using the th ree techniques is discussed, and conclusions are drawn both about the validity of interpreting the magnitude of Fresnel contrast data quanti tatively and about the degree to which high-angle annular dark-field i mages of such materials are affected by inelastic scattering and strai n.