Citation
Pc. Chang et al., Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor, IEEE ELEC D, 22(3), 2001, pp. 113-115
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106
→ ACNP
Volume
22
Issue
3
Year of publication
2001
Pages
113 - 115
Database
ISI
SICI code
0741-3106(200103)22:3<113:DCOTGP>2.0.ZU;2-Y
Abstract
We have demonstrated the de and rf characteristics of a novel p-n-p GaAs/In
GaAsN/GaAs double heterojunction bipolar transistor. This device has near i
deal current-voltage (I-V) characteristics with a current gain greater than
45. The smaller bandgap energy of the InGaAsN base has led to a device tur
n-on voltage that is 0.27 V lower than in a comparable pn-p AlGaAs/GaAs het
erojunction bipolar transistor. This device has shown f(T) and f(MAX) value
s of 12 GHz, In addition, the aluminum-free emitter structure eliminates is
sues typically associated with AlGaAs.